The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Sep. 21, 2016
Nanyang Technological University, Singapore, SG;
Ye Lin, Singapore, SG;
Chuan Seng Tan, Singapore, SG;
Nanyang Technological University, Singapore, SG;
Abstract
A semiconductor devicecomprising a substratehaving a through-substrate via hole, the through-substrate via holehaving formed therein: a first capacitor electrode layerand a second capacitor electrode layer, and a dielectric material layerdisposed between the first capacitor electrode layerand the second capacitor electrode layer; and a through-substrate via conductor. A method of forming a semiconductor device, the semiconductor devicecomprising a through-substrate via hole, the method comprising forming, in the through-substrate via hole: a first capacitor electrode layerand a second capacitor electrode layer, and a dielectric material layerdisposed between the first capacitor electrode layerand the second capacitor electrode layer; and a through-substrate via conductor