The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jun. 30, 2016
Samsung Display Co., Ltd., Yongin-si, KR;
Eunhyun Kim, Yongin-si, KR;
Taeyoung Kim, Yongin-si, KR;
Hyehyang Park, Yongin-si, KR;
Shinhyuk Yang, Yongin-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.