The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Jan. 08, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kwang Young Jung, Hwaseong-si, KR;

Dong Won Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11573 (2017.01); H01L 27/1157 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/4234 (2013.01);
Abstract

A vertical-type memory device a vertical-type memory device comprising a substrate including a first region and a second region, adjacent to the first region, a first conductive layer extending on the first region and the second region, and a second conductive layer extending on the first region and the second region, the second conductive layer stacked on the first conductive layer. An upper surface of the substrate has a step portion at a boundary between the first region and the second region, and the upper surface of the substrate in the first region is lower than in the second region.


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