The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Aug. 22, 2018
Toshiba Memory Corporation, Tokyo, JP;
Hideto Takekida, Nagoya Aichi, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A memory device includes a plurality of word lines spaced from one another in a first direction, a first insulating film provided between adjacent word lines, a plurality of select gates located above the plurality of word lines in the first direction, a first intermediate electrode provided between the plurality of word lines and the select gates, a second insulating film provided between the first intermediate electrode and the select gates, a semiconductor pillar extending through the plurality of word lines, the first insulating film, the first intermediate electrode, the second insulating film, and the select gates, and extending in the first direction, and a charge retention film located between each of the plurality of word lines and the semiconductor pillar, wherein the second insulating film has a second thickness in the first direction that is greater than a first thickness of the first insulating film in the first direction.