The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Mar. 07, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Yuta Watanabe, Yokkaichi, JP;

Akira Mino, Yokkaichi, JP;

Masahisa Sonoda, Yokkaichi, JP;

Takashi Shimizu, Nagoya, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 27/11551 (2017.01); H01L 27/11521 (2017.01); H01L 27/11568 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 27/11521 (2013.01); H01L 27/11551 (2013.01); H01L 27/11568 (2013.01);
Abstract

A semiconductor memory device of embodiments includes a semiconductor substrate having a first and a second region adjacent to the first region in a first direction, a laminated body including electrode layers laminated on the semiconductor substrate in a second direction, a first insulator splitting the laminated body at the second region in a third direction, and extending in the first and second direction, and branching into two insulator films at the first region, and enclosing continuously a first portion of the laminated body, a contact portion extending in the first portion in the second direction, and a memory portion extending through the laminated body and the first insulator in the second direction at the second region. A first width in the third direction of the first portion is wider than a second width in the third direction of at least one of the electrode layers at the second region.


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