The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jan. 15, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Yuji Ishii, Ibaraki, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/07 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/40 (2006.01); H01L 29/36 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0727 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/402 (2013.01); H01L 29/42356 (2013.01); H01L 29/66681 (2013.01); H01L 29/7818 (2013.01); H01L 21/823814 (2013.01); H01L 27/0629 (2013.01);
Abstract
Provided are a semiconductor device capable of preventing erroneous operation and providing a field plate effect, and a method of manufacturing the semiconductor device. In a diode, a gate electrode, a psource region, and an n-type body region are electrically coupled to one another. A contact region is disposed between the n-type body region and the psource region in a first surface of a semiconductor substrate.