The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jun. 14, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Soon Gyu Hwang, Seongnam-si, KR;
Kyoung Woo Lee, Hwaseong-si, KR;
YoungWoo Cho, Suwon-si, KR;
Il Sup Kim, Suwon-si, KR;
Su Hyun Bark, Suwon-si, KR;
Young-Ju Park, Suwon-si, KR;
Jong Min Baek, Seoul, KR;
Min Huh, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate, a first lower wiring line on the substrate, a first insulation layer on the first lower wiring line, a first dielectric barrier layer and a first etch stop layer sequentially stacked on the first insulation layer, a second insulation layer on the first etch stop layer, a first upper wiring line extending through the second insulation layer, the first etch stop layer, and the first dielectric barrier layer, and a first conductive via in the first insulation layer and electrically connecting the first lower wiring line and the first upper wiring line. An upper surface of the first conductive via protrudes above a lower surface of the first upper wiring line.