The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Dec. 27, 2018
Delta Electronics, Inc., Taoyuan, TW;
Li-Fan Lin, Taoyuan, TW;
Chun-Chieh Yang, Taoyuan, TW;
DELTA ELECTRONICS, INC., Taoyuan, TW;
Abstract
A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, a first insulating layer, a first source pad, and a first drain pad. The source electrode, the drain electrode, and the gate electrode are disposed on an active region of the active layer. The first insulating layer is disposed on the source electrode, the drain electrode, and the gate electrode. The first source pad and the first drain pad are disposed on the first insulating layer and the active region. The first source pad includes a first source body and a first source branch. The first source branch is electrically connected to the first source body and disposed on the source electrode. The first drain pad includes a first drain body and a first drain branch. The first drain branch is electrically connected to the first drain body and disposed on the drain electrode.