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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10950508 B1

PDFFull Text
Date of Patent:
Mar. 16, 2021

Filed:

Dec. 12, 2019

Ion depth profile control method, ion implantation method and semiconductor device manufacturing method based on the control method, and ion implantation system adapting the control method

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seongrak Jeong, Seoul, KR;

Seungmo Kang, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Lee IP Law, P.C.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/265 (2006.01); G06N 3/08 (2006.01); C23C 14/48 (2006.01); C23C 14/54 (2006.01); G06N 3/04 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); C23C 14/48 (2013.01); C23C 14/542 (2013.01); G06N 3/04 (2013.01); G06N 3/08 (2013.01); H01L 21/26513 (2013.01); H01J 37/3171 (2013.01);
Abstract

An ion depth profile control method includes performing reinforcement learning, whereby a similarity between an ion depth profile and a box profile is output as a reward when the similarity is equal to or greater than a set criterion, the ion depth profile being an ion concentration according to a wafer depth in an ion implantation process, and the box profile being a target profile, obtaining at least one process condition of the ion implantation process as a result of the reinforcement learning, and generating a process recipe regarding the at least one process condition.

Find Patent Forward Citations

Jeong, Seongrak. (2021). Ion depth profile control method, ion implantation method and semiconductor device manufacturing method based on the control method, and ion implantation system adapting the control method (U.S. Patent No. 10950508). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10950508

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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