The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Mar. 22, 2019
Applicant:
Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Wuhan, CN;
Inventor:
Ming Xiang, Wuhan, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 29/08 (2006.01); H01L 27/32 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02664 (2013.01); H01L 29/0847 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 27/3248 (2013.01); H01L 27/3276 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract
A method of fabricating an array substrate, an array substrate, a display panel, and a display device are provided. In an embodiment, a gate insulating layer above a channel region is doped with fluorine atoms. Since a fluorine-containing inorganic layer can absorb hydrogen atoms, it can block hydrogen atoms from diffusing downward into a metal oxide semiconductor, thereby avoiding affecting electrical properties of thin film transistors. Simultaneously, only a metal is required to use as a metal gate layer, which simplifies process and reduces production costs.