The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Apr. 04, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Edward Sung, Hwaseong-si, KR;

Hyuk Kim, Seongnam-si, KR;

Daehyun Jang, Hwaseong-si, KR;

Sung Il Cho, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01L 21/6719 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01); H01L 21/6833 (2013.01); H01J 37/32091 (2013.01); H01J 2237/334 (2013.01);
Abstract

Shrouds and substrate treating systems including the same are provided. Substrate treating systems may include a process chamber, a supporter, and a plasma source that is spaced apart from the supporter in a vertical direction. The substrate treating systems may also include a shroud configured to contain the plasma therein. The shroud may include a sidewall portion and a first flange portion extending horizontally from the sidewall portion and including a plurality of first slits that extend through a thickness of the first flange portion. The first flange portion may define a first opening, and a portion of the supporter may extend through the first opening. The sidewall portion may include a plurality of second slits, and each of the plurality of second slits may extend through a thickness of the sidewall portion and may extend from one of the plurality of first slits toward the plasma source.


Find Patent Forward Citations

Loading…