The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Jan. 28, 2020
Applicant:

Honeywell International Inc., Morris Plains, NJ (US);

Inventor:

Daniel Youngner, Maple Grove, MN (US);

Assignee:

Honeywell International Inc., Charlotte, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 3/38 (2006.01); H01J 9/14 (2006.01); G06N 10/00 (2019.01); B82Y 10/00 (2011.01); G21K 1/00 (2006.01); H01J 49/00 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01J 3/38 (2013.01); B82Y 10/00 (2013.01); G06N 10/00 (2019.01); G21K 1/00 (2013.01); H01J 9/14 (2013.01); H01J 49/00 (2013.01); H01J 49/0018 (2013.01); H01L 29/945 (2013.01);
Abstract

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.


Find Patent Forward Citations

Loading…