The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Oct. 20, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventor:
Thoralf Kautzsch, Dresden, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); G01P 15/125 (2006.01); B81C 1/00 (2006.01); G01P 15/11 (2006.01); G01P 15/08 (2006.01);
U.S. Cl.
CPC ...
G01P 15/125 (2013.01); B81B 3/0021 (2013.01); B81C 1/00142 (2013.01); G01P 15/11 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0136 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); G01P 2015/0814 (2013.01);
Abstract
An electronic device is based on a single crystal semiconductor substrate. A cavity is formed in the semiconductor substrate. Further, a movably suspended mass is defined by one or more trenches extending from one side of the semiconductor substrate to the cavity. A first electrode layer is provided on the suspended mass. Further, a cover layer covering the suspended mass is provided. The cover layer includes a second electrode layer arranged opposite to the first electrode layer and spaced therefrom by a gap.