The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Oct. 30, 2018
Applicant:
Analog Devices International Unlimited Company, Limerick, IE;
Inventor:
Bernhard Strzalkowski, Munich, DE;
Assignee:
Analog Devices International Unlimited Company, Limerick, IE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); G01K 13/00 (2021.01); G01K 7/16 (2006.01); H03K 17/081 (2006.01); G01K 1/20 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
G01K 7/16 (2013.01); G01K 1/20 (2013.01); H03K 17/08104 (2013.01); H03K 17/08116 (2013.01); H03K 2017/0806 (2013.01);
Abstract
Techniques for determining a temperature measurement of a junction of a power switch are described. A current can be applied to a control node, e.g., gate terminal, of the power switch, such as a field-effect transistor (FET) or an insulated-gate bipolar transistor (IGBT), while the power switch is in a steady-state region in which a gate-to-source voltage (e.g., FET) or a gate-to-emitter voltage (e.g., IGBT) of the power switch is constant. While in the steady-state region, the temperature measurements can be performed, thereby ensuring accuracy of the measurement.