The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Mar. 20, 2017
Applicant:

U.s.a., As Represented BY the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);

Inventors:

Hyun Jung Kim, Poquoson, VA (US);

Sang H. Choi, Poquoson, VA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C30B 23/08 (2006.01); C23C 14/35 (2006.01); H01J 37/32 (2006.01); H01J 37/34 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01);
U.S. Cl.
CPC ...
C30B 23/08 (2013.01); C23C 14/06 (2013.01); C23C 14/3414 (2013.01); C23C 14/3428 (2013.01); C23C 14/35 (2013.01); C30B 23/005 (2013.01); C30B 23/06 (2013.01); C30B 29/52 (2013.01); H01J 37/32027 (2013.01); H01J 37/32082 (2013.01); H01J 37/32669 (2013.01); H01J 37/3405 (2013.01); H01J 37/345 (2013.01); H01J 37/3414 (2013.01); H01J 37/3426 (2013.01); H01J 37/3432 (2013.01); H01J 37/3435 (2013.01); H01J 37/3497 (2013.01); H01L 21/0242 (2013.01); H01L 21/02532 (2013.01); H01L 21/02598 (2013.01); H01L 21/02631 (2013.01);
Abstract

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal SiGefilm on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.


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