The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Sep. 17, 2020
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Myeongseok Lee, Campbell, CA (US);

Murtuza Lilamwala, San Jose, CA (US);

Anup Nayak, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H02M 1/08 (2006.01); H02M 1/088 (2006.01);
U.S. Cl.
CPC ...
H02M 3/33576 (2013.01); H02M 1/08 (2013.01); H02M 1/088 (2013.01);
Abstract

A system includes a primary field effect transistor (FET) coupled to a primary winding on a primary side of an alternating current-to-direct current (AC-DC) converter. The system also includes a gate driver, coupled to the primary FET, that is to, in response to a signal received from a startup controller of the AC-DC converter, turn on the primary FET. The gate driver includes a voltage bias p-type metal-oxide-semiconductor (VBP) buffer coupled between an external supply voltage and a VBP portion of driving chain circuitry, the driving chain circuitry to drive a gate of the primary FET. The gate driver also includes a voltage bias n-type metal-oxide-semiconductor (VBN) buffer coupled between a VBN regulator, which generates an internal supply voltage, and a VBN portion of the driving chain circuitry.


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