The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Nov. 21, 2019
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Vincent Reboud, Grenoble, FR;
Georgio El Zammar, Grenoble, FR;
Rami Khazaka, Grenoble, FR;
Sylvie Menezo, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/02 (2006.01); H01S 5/30 (2006.01); H01S 5/32 (2006.01); H01S 5/40 (2006.01); H01S 5/0625 (2006.01); H01S 5/10 (2021.01);
U.S. Cl.
CPC ...
H01S 5/021 (2013.01); H01S 5/0203 (2013.01); H01S 5/0206 (2013.01); H01S 5/06256 (2013.01); H01S 5/06258 (2013.01); H01S 5/105 (2013.01); H01S 5/1014 (2013.01); H01S 5/3054 (2013.01); H01S 5/32 (2013.01); H01S 5/4043 (2013.01); H01S 5/3013 (2013.01); H01S 2304/04 (2013.01);
Abstract
A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.