The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Jan. 02, 2017
Applicants:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Isorg;
Inventors:
Anis Daami, Bembla, TN;
Mohammed Benwadih, Champagny sur Marne, FR;
Assignees:
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
ISORG, Grenoble, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/428 (2013.01); H01L 51/0012 (2013.01); H01L 51/424 (2013.01); H01L 51/0035 (2013.01); H01L 51/0036 (2013.01); H01L 51/0037 (2013.01); H01L 51/0038 (2013.01); H01L 51/0047 (2013.01);
Abstract
A photoresistor comprises two electrodes connected by a photosensitive layer of the photoresistor, and at least one additional layer which is in contact with the photosensitive layer in order to influence the behavior of the photoresistor regarding carrier collection between the two electrodes, in order to improve the sensitivity of the photoresistor.
Daami, Anis. (2021). Photoresistor with improved sensitivity (U.S. Patent No. 10944066). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10944066
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile