The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Mar. 25, 2014
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Ivan-Christophe Robin, Grenoble, FR;
Hubert Bono, Grenoble, FR;
Abstract
A light-emitting diode including: a first n-doped semiconductor layer configured to form a cathode, and a second p-doped semiconductor layer configured to form an anode, and together forming a p-n junction of the diode; an active zone located between the first layer and the second layer, including at least two emissive layers including a semiconductor capable of forming quantum wells, and a plurality of semiconductor barrier layers such that each emissive layer is located between two barrier layers; an n-doped semiconductor buffer layer located between the first layer and the active zone, the n-dope semiconductor of the buffer layer having a band gap energy less than or equal to about 97% of the band gap energy of the p-doped semiconductor of the second layer.