The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Jul. 29, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Praneet Adusumilli, Albany, NY (US);
Emre Alptekin, Wappingers Falls, NY (US);
Christian Lavoie, Pleasantville, NY (US);
Ahmet S. Ozcan, San Jose, CA (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01); H01L 29/04 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 21/28518 (2013.01); H01L 21/823431 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823425 (2013.01); H01L 21/823475 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A semiconductor device includes epitaxially grown source/drain (S/D) regions each having a cross-sectional quadrilateral shape formed on a semiconductor fin on opposite sides of a transversely disposed gate structure. The S/D regions include top (111) facets on top halves of the cross-sectional quadrilateral shape. The device further includes a silicide formed on the top (111) facets.