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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10943975 B1

PDFFull Text
Date of Patent:
Mar. 09, 2021

Filed:

Jun. 28, 2019

Method of manufacturing a semiconductor device having side-diffused trench plug

Applicant:

Littelfuse, Inc., Chicago, IL (US);

Inventors:

Ader Shen, Hsin-Chu County, TW;

Ting-Fung Chang, Hsin-Chu County, TW;

James Lu, Hsin-Chu County, TW;

Wayne Lin, Hsin-Chu County, TW;

Assignee:

Littelfuse, Inc., Chicago, IL (US);

Attorney:

Kacvinsky Daisak Bluni PLLC

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 29/06 (2006.01); H01L 21/76 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01L 21/324 (2006.01); H01L 21/763 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0642 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/743 (2013.01); H01L 21/76 (2013.01); H01L 21/763 (2013.01); H01L 21/76877 (2013.01); H01L 23/535 (2013.01); H01L 29/8611 (2013.01);
Abstract

A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.

Find Patent Forward Citations

Shen, Ader. (2021). Method of manufacturing a semiconductor device having side-diffused trench plug (U.S. Patent No. 10943975). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10943975

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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