The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Apr. 03, 2019
Applicant:
National University of Singapore, Singapore, SG;
Inventors:
Assignee:
National University of Singapore, Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/06 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/06 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/14 (2013.01);
Abstract
In one example embodiment, a SOT-MRAM includes a storage unit having a CoXPtbased free layer. The storage unit includes a bottom electrode and the CoXPtbased free layer is disposed over the bottom electrode. Further, the storage unit includes a tunnel barrier layer over the CoXPtbased free layer, and a fixed layer over the tunnel barrier layer. The CoXPtbased free layer, tunnel barrier layer and fixed layer form a magnetic tunnel junction. The storage unit may also include a top electrode over the MTJ.