The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Mar. 04, 2019
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Yosuke Kobayashi, Shinagawa Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A semiconductor storage device includes a plurality of memory cells and a first circuit. The first circuit is configured to read data from a subset of the memory cells, such as a page unit or the like, then determine whether the data as read from the subset contains an error. The first circuit calculates a bit error rate for the subset if the subset contains an error and performs a recovery processing on the subset if the calculated bit error rate is less than a first threshold value but greater than a second threshold value.


Find Patent Forward Citations

Kobayashi, Yosuke. (2021). Semiconductor storage device (U.S. Patent No. 10943949). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10943949

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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