The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Aug. 21, 2017
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Xiangli Li, Palo Alto, CA (US);

Xiaofeng Fan, San Jose, CA (US);

Chung Chun Wan, Fremont, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/378 (2011.01); H04N 5/355 (2011.01); H04N 5/3745 (2011.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14609 (2013.01); H01L 27/14616 (2013.01); H04N 5/35572 (2013.01); H04N 5/378 (2013.01); H04N 5/379 (2018.08); H04N 5/37452 (2013.01);
Abstract

Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.


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