The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Jan. 04, 2019
Applicant:
Nikon Corporation, Tokyo, JP;
Inventor:
Hironobu Murata, Yokohama, JP;
Assignee:
NIKON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/225 (2006.01); H04N 5/232 (2006.01); H04N 5/369 (2011.01); H04N 5/3745 (2011.01); H04N 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H04N 5/2254 (2013.01); H04N 5/23209 (2013.01); H04N 5/23212 (2013.01); H04N 5/232122 (2018.08); H04N 5/3696 (2013.01); H04N 5/36961 (2018.08); H04N 5/37452 (2013.01); H04N 9/04557 (2018.08);
Abstract
An imaging device having a first surface on which light is incident and a second surface on an opposite side of the first surface, includes a photoelectric conversion section including semiconductors having a same conductivity type, in which an impurity concentration on the second surface side is higher than an impurity concentration on the first surface side.