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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10943932 B1

PDFFull Text
Date of Patent:
Mar. 09, 2021

Filed:

Oct. 17, 2019

Light-receiving element, method of manufacturing light-receiving element, imaging device, and electronic apparatus

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Shinichi Yoshida, Kanagawa, JP;

Shunsuke Maruyama, Kanagawa, JP;

Ryosuke Matsumoto, Tokyo, JP;

Shuji Manda, Kanagawa, JP;

Tomomasa Watanabe, Kanagawa, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;

Attorney:

Chip Law Group

Primary Examiner:

Thomas L Dickey

Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/0216 (2014.01); H04N 5/33 (2006.01); H04N 5/369 (2011.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 27/144 (2013.01); H01L 27/146 (2013.01); H01L 27/14603 (2013.01); H01L 27/14649 (2013.01); H01L 31/0224 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/102 (2013.01); H01L 31/1035 (2013.01); H04N 5/33 (2013.01); H04N 5/369 (2013.01);
Abstract

This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

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