The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
May. 14, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jin Woo Bae, Yongin-si, KR;
Su Young Shin, Hwaseong-si, KR;
Young Ho Koh, Seongnam-si, KR;
Bo Un Yoon, Seoul, KR;
Il Young Yoon, Hwaseong-si, KR;
Yang Hee Lee, Incheon, KR;
Hee Sook Cheon, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of forming a semiconductor device includes forming a mold structure on a substrate, forming a first mask layer having a deposition thickness on the mold structure and patterning the first mask layer to form first mask openings which expose the mold structure. The mold structure is etched to form holes that penetrate the mold structure. The first mask layer is thinned to form mask portions having thickness smaller than the deposition thickness. Conductive patterns are formed to fill the holes and the first mask openings. The first mask layer including the mask portions is etched to expose the mold structure. The conductive patterns include protrusions. A chemical mechanical polishing process is performed to remove the protrusions of the conductive patterns.