The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Aug. 08, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first trench on the device region, a first device isolation layer in the first trench and defining an active pattern of the device region, a second trench on the interface region, and a second device isolation layer in the second trench. The second isolation layer includes a buried dielectric pattern, a dielectric liner pattern on the buried dielectric pattern, and a first gap-fill dielectric pattern on the dielectric liner pattern. The buried dielectric pattern includes a floor segment on a floor of the second trench, and a sidewall segment on a sidewall of the second trench. The sidewall segment has a thickness different from a thickness of the floor segment.