The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jan. 17, 2020
Applicant:

National Applied Research Laboratories, Taipei, TW;

Inventors:

Jiun-Woei Huang, Taipei, TW;

Min-Wei Hung, Hsinchu, TW;

Kuo-Cheng Huang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/7005 (2013.01); G03F 7/7015 (2013.01); G03F 7/7035 (2013.01); G03F 7/70075 (2013.01);
Abstract

An ultraviolet (UV) light source is provided. The device uses a high-uniformity diode array. A lens unit of collimated illumination lenses is used. A light source of UV light-emitting diode (UVLED) array is formed and passes through the lens unit to uniformly distribute the light source and obtain a collimated light. The present invention comprises a light source of UVLED array; a collimated illumination lens unit; and a substrate. The construction is simple. The present invention can be applied in the lithography of a semiconductor. The lithography forms contact lines of widths not greater than 3 microns (μm); soft-contact lines of widths of 3˜30 μm; and short-spaced lines of widths of 30˜200 μm. The present invention avoids the mask from contact wear-out for multiple uses, and further reduces the replacement rate.


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