The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jan. 06, 2020
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Mo Chen, Beijing, CN;

Qun-Qing Li, Beijing, CN;

Li-Hui Zhang, Beijing, CN;

Yuan-Hao Jin, Beijing, CN;

Dong An, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/48 (2012.01); G03F 1/50 (2012.01); G03F 7/30 (2006.01);
U.S. Cl.
CPC ...
G03F 7/20 (2013.01); G03F 1/48 (2013.01); G03F 1/50 (2013.01); G03F 7/2047 (2013.01); G03F 7/30 (2013.01);
Abstract

A method of making microstructures, including: setting a photoresist layer on a surface of a base; covering a surface of the photoresist layer with a photolithography mask plate, wherein the photolithography mask plate includes: a substrate; a patterned chrome layer on a surface of the substrate; a carbon nanotube layer on the patterned chrome layer, wherein a first pattern of the patterned chrome layer is the same as a second pattern of the carbon nanotube layer; a cover layer on the carbon nanotube layer; exposing the photoresist layer to form an exposed photoresist layer by irradiating the photoresist layer through the photolithography mask plate with ultraviolet light; and developing the exposed photoresist layer to obtain a patterned photoresist microstructures.


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