The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Dec. 29, 2017
Applicant:

Oclaro Technology Limited, Towcester, GB;

Inventors:

Neil David Whitbread, Towcester, GB;

Stephen Jones, Northamptonshire, GB;

Assignee:

Lumentum Technology UK Limited, Northamptonshire, GB;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/017 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01); H01S 5/50 (2006.01); H01S 5/0625 (2006.01);
U.S. Cl.
CPC ...
G02F 1/01708 (2013.01); H01L 21/761 (2013.01); H01L 21/76237 (2013.01); H01S 5/026 (2013.01); H01S 5/0208 (2013.01); H01S 5/343 (2013.01); H01S 5/50 (2013.01); G02F 2202/101 (2013.01); G02F 2202/102 (2013.01); G02F 2202/108 (2013.01); G02F 2203/50 (2013.01); G02F 2203/70 (2013.01); H01S 5/0625 (2013.01);
Abstract

A method of providing electrical isolation between subsections in a waveguide structure for a photonic integrated device, the structure comprising a substrate, a buffer layer and a core layer, the buffer layer being located between the substrate and the core and comprising a dopant of a first type, the first type being either n-type or p- type, the method comprising the steps of prior to adding any layer to a side of the core layer opposite to the buffer layer: selecting at least one area to be an electrical isolation region, applying a dielectric mask to a surface of the core layer opposite to the buffer layer, with a window in the mask exposing an area of the surface corresponding to the selected electrical isolation region, implementing diffusion of a dopant of a second type, the second type being of opposite polarity to the first type, and allowing the dopant of the second type to penetrate to the substrate to form a blocking junction.


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