The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 2021
Filed:
Oct. 07, 2019
Applicants:
SK Innovation Co., Ltd., Seoul, KR;
Sk-materials Co., Ltd., Yeongju-si, KR;
Inventors:
Cheol Woo Kim, Daejeon, KR;
Yu Na Shim, Daejeon, KR;
Je Ho Lee, Daejeon, KR;
Jae Hoon Kwak, Yeongju-si, KR;
Young Bom Kim, Yeongju-si, KR;
Jin Kyung Jo, Yeongju-si, KR;
Assignees:
SK Innovation Co., Ltd., Seoul, KR;
SK-Materials Co., Ltd., Yeongju-si, KR;
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/04 (2006.01); C09K 13/06 (2006.01); H01L 21/321 (2006.01); C23F 1/16 (2006.01); H01L 21/311 (2006.01); C09K 13/00 (2006.01);
U.S. Cl.
CPC ...
C09K 13/04 (2013.01); C09K 13/06 (2013.01); C09K 13/00 (2013.01); C23F 1/16 (2013.01); H01L 21/311 (2013.01); H01L 21/3212 (2013.01);
Abstract
An etching composition providing a high selection ratio enabling selective removal of a nitride film and minimization of an etching rate, a preparation method thereof, an etching composition additive prepared through a reaction of phosphoric anhydride and a silane compound represented by Formula 1 below, a method for preparing the same and an etching composition including the same are provided: