The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Jul. 27, 2017
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Zhengbo Yu, Shrewsbury, MA (US);

Madis Raukas, Lexington, MA (US);

Yi Zheng, Lynnfield, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/599 (2006.01); C09K 11/08 (2006.01); C04B 35/597 (2006.01); C09K 11/77 (2006.01); F21V 9/30 (2018.01);
U.S. Cl.
CPC ...
C04B 35/597 (2013.01); C09K 11/7734 (2013.01); F21V 9/30 (2018.02); C04B 2235/3206 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3882 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/666 (2013.01); C04B 2235/668 (2013.01); C04B 2235/77 (2013.01); C04B 2235/9646 (2013.01);
Abstract

Methods for producing wavelength converters are described. The methods include sintering a mixture consisting essentially of first particles and second particles to form a sintered article. In embodiments the first particles consist essentially of particles of β-SiAlON or precursors thereof, and the second particles consist essentially one or more sintering aids or precursors thereof. In embodiments the sintered article has a density that is greater than or equal to about 90% of a theoretical bulk density of the mixture, and is configured to convert primary light incident thereon to secondary light, wherein the secondary light exhibits a peak with a full width half maximum of greater than 0 to about 60 nanometers (nm) within a wavelength range of about 495 nm to about 600 nm.


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