The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Nov. 08, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dong Kyu Lee, Hwasung-si, KR;
Young Hyun Kim, Hwasung-si, KR;
Jung Hwan Park, Hwasung-si, KR;
Jung Min Lee, Hwasung-si, KR;
Kyung Ii Hong, Hwasung-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract
A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.