The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Dec. 15, 2017
Stanley Electric Co., Ltd., Tokyo, JP;
Toshiyuki Obata, Tokyo, JP;
STANLEY ELECTRIC CO., LTD, Tokyo, JP;
Abstract
A group III nitride semiconductor light-emitting element includes a single crystal substrate and an element layer. The element layer includes an n-type layer, an active layer, and a p-type layer formed on the upper surface of the single crystal substrate in this order, and has a composition represented by the composition formula AlGaInN (0≤X≤1.0, 0≤Y≤1.0, 0≤X+Y≤1.0). The thickness of the single crystal substrate is at least 80 μm. The area of the upper surface of the substrate is larger than the area of the bottom surface of the substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile