The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Jul. 14, 2017
Xiamen Changelight Co., Ltd., Fujian, CN;
Zhiwei Lin, Fujian, CN;
Kaixuan Chen, Fujian, CN;
Yong Zhang, Fujian, CN;
Xiangjing Zhuo, Fujian, CN;
Wei Jiang, Fujian, CN;
Yang Wang, Fujian, CN;
Jichu Tong, Fujian, CN;
Tianzu Fang, Fujian, CN;
Xiamen Changelight Co., Ltd., Xiamen, CN;
Abstract
A semiconductor wafer includes a substrate (), a buffer layer () deposited on the substrate (), and an epitaxial layer () above the buffer layer (). The buffer layer () includes a plurality of semiconductor material layers () and a plurality of oxygen-doped material layers (). The semiconductor material layers () and the oxygen-doped material layers () are deposited in an alternating arrangement on top of each other. Oxygen concentrations of the oxygen-doped material layers () gradually decrease along a direction from the substrate () to the epitaxial layer ().