The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

May. 17, 2019
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hyun Jee Oh, Seoul, KR;

Rak Jun Choi, Seoul, KR;

Byeoung Jo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/42 (2010.01); H01L 23/62 (2006.01); H01L 25/07 (2006.01); H01S 5/04 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01L 21/66 (2006.01); H01L 25/075 (2006.01); H01S 5/343 (2006.01); H01L 33/04 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 22/12 (2013.01); H01L 23/62 (2013.01); H01L 25/0753 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0093 (2020.05); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/42 (2013.01); H01S 5/22 (2013.01); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01); H01L 33/04 (2013.01); H01L 33/145 (2013.01);
Abstract

A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.


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