The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Jun. 21, 2012
Dominique Biava, Croissy-Beaubourg, FR;
Mathieu Rault, Croissy-Beaubourg, FR;
Jean-marc Inglese, Bussy Saint Georges, FR;
Sylvie Bothorel, Paris, FR;
Didier Gourier, Paris, FR;
Laurent Binet, Vitry-sur-Seine, FR;
Philippe Barboux, L'Hay les Roses, FR;
Jean-pierre Ponpon, Eckbolsheim, FR;
Dominique Biava, Croissy-Beaubourg, FR;
Mathieu Rault, Croissy-Beaubourg, FR;
Jean-Marc Inglese, Bussy Saint Georges, FR;
Sylvie Bothorel, Paris, FR;
Didier Gourier, Paris, FR;
Laurent Binet, Vitry-sur-Seine, FR;
Philippe Barboux, L'Hay les Roses, FR;
Jean-Pierre Ponpon, Eckbolsheim, FR;
TROPHY, Croissy-Beaubourg, FR;
Abstract
This invention relates to a method to manufacture a chip to detect the direct conversion of X-rays. It also relates to a direct conversion detector for X-rays using such a chip and dental radiology equipment using at least one such detector. The method to manufacture the wafer comprises a step for applying pressure () to a powdered polycrystalline semiconductor material and a step for heating (-) during a set time period. It comprises a preliminary step for providing an impurity level of at least 0.2% in the polycrystalline semiconductor material.