The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Aug. 10, 2016
Applicant:
Nissan Motor Co., Ltd., Yokohama, JP;
Inventors:
Ryota Tanaka, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Yasuaki Hayami, Kanagawa, JP;
Assignee:
NISSAN MOTOR CO., LTD., Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/8232 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01); H01L 29/7825 (2013.01);
Abstract
A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.