The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Aug. 07, 2019
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Li-Che Chen, Hsinchu, TW;
Chien-Hsien Song, Kaohsiung, TW;
Chih-Wei Lin, Jhubei, TW;
Hung-Chih Tan, Kaohsiung, TW;
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 29/1083 (2013.01); H01L 29/66681 (2013.01); H01L 29/7823 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed on the substrate, a source disposed in the substrate and located on one side of the gate, a drain disposed in the substrate and located on another side of the gate, and a gate extending portion disposed on the substrate and located between the gate and the drain. The doping type of the gate is the opposite of that of the gate extending portion.