The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Nov. 21, 2018
Aledia, Grenoble, FR;
Ivan-Christophe Robin, Grenoble, FR;
Jérôme Napierala, Saint Egrève, FR;
ALEDIA, Grenoble, FR;
Abstract
A pseudosubstrate for an optoelectronic device suitable for the growth of light-emitting diodes including a substrate and a buffer structure formed on an upper face of the substrate. The buffer structure includes at least one first portion wherein one layer made of solid gallium nitride (GaN) delimits at least one free surface of a first type facing away from the upper face of the substrate, each free surface of the first type being suitable for the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a first wavelength. The buffer structure including at least one second portion wherein a stack alternating layers of indium and gallium nitride (InGaN) and intermediate layers of GaN and in which the indium is present in a first weight ratio, delimits at least one free surface of a second type facing away from the upper face of the substrate, each free surface of the second type being suited to the growth on same of at least one light-emitting diode mostly based on a III-V compound capable of emitting light at a second wavelength different from the first wavelength. The second portion of the buffer structure is offset relative to the first portion of the buffer structure in a general plane (P) oriented parallel to the plane of the upper face of the substrate. Also described is an optoelectronic device and a manufacturing method.