The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Nov. 08, 2018
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Shih-Ping Lee, Hsinchu, TW;
Pin-Chieh Huang, Hsinchu County, TW;
Jui-Hung Hung, Hsinchu, TW;
Yi-Chen Yeh, Chiayi, TW;
Cheng-Han Yang, Hsinchu, TW;
Wen-Hao Huang, Hsinchu, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
An image sensor including a substrate, a light sensing device, a storage node, a buried gate structure, and a first light shielding layer is provided. The light sensing device is disposed in the substrate. The storage node is disposed in the substrate. The storage node and the light sensing device are separated from each other. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. The first light shielding layer is disposed on the buried gate and is located above the storage node. The first light shielding layer is electrically connected to the buried gate.