The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Sep. 14, 2017
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Dolphin Abessolo Bidzo, Nijmegen, NL;
Janusz Tomasz Klimczak, Hamburg, DE;
Detlef Clawin, Hamburg, DE;
Radu Mircea Secareanu, Phoenix, AZ (US);
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H02H 9/04 (2006.01); H01L 27/06 (2006.01); H01L 23/66 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0288 (2013.01); H01L 23/5225 (2013.01); H01L 23/66 (2013.01); H01L 27/0255 (2013.01); H01L 27/0676 (2013.01); H01L 28/10 (2013.01); H02H 9/046 (2013.01); H01L 2223/6611 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10271 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/3011 (2013.01);
Abstract
An electrostatic discharge, ESD, protection structure () formed within a semiconductor substrate of an integrated circuit device (). The integrated circuit device () comprising: a radio frequency domain (); a digital domain (). The ESD protection structure () further includes an intermediate domain located between the radio frequency domain () and the digital domain () that comprises at least one radio frequency, RF, passive or active device that exhibits an impedance characteristic that increases as a frequency of operation increases.