The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Jul. 03, 2019
Applicant:

Aledia, Grenoble, FR;

Inventors:

Christophe Bouvier, Grenoble, FR;

Erwan Dornel, Fontaine, FR;

Xavier Hugon, Teche, FR;

Carlo Cagli, Grenoble, FR;

Assignee:

Aledia, Echirolles, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 25/16 (2006.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 27/15 (2006.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); H01L 33/18 (2010.01); H05B 45/50 (2020.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 27/15 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/18 (2013.01); H01L 2924/0002 (2013.01); H05B 45/50 (2020.01);
Abstract

An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.


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