logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10937700 B1

PDFFull Text
Date of Patent:
Mar. 02, 2021

Filed:

May. 01, 2017

Semiconductor devices

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Mirco Cantoro, Suwon-si, KR;

Yun-Il Lee, Anyang-si, KR;

Hyung-Suk Lee, Suwon-si, KR;

Yeon-Cheol Heo, Suwon-si, KR;

Byoung-Gi Kim, Suwon-si, KR;

Chang-Min Yoe, Seoul, KR;

Seung-Chan Yun, Suwon-si, KR;

Dong-Hun Lee, Anyang-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

F. Chau & Associates, LLC

Primary Examiner:

Mary A Wilczewski

Assistant Examiner:

Tsz K Chiu

Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 27/24 (2006.01); H01L 27/115 (2017.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/786 (2006.01); H01L 27/088 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823487 (2013.01); H01L 21/84 (2013.01); H01L 27/0886 (2013.01); H01L 27/1203 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66666 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

Find Patent Forward Citations

Quick Actions:

Cantoro, Mirco. (2021). Semiconductor devices (U.S. Patent No. 10937700). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10937700

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…