The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Sep. 05, 2018
Applicant:

SK Hynix Inc., Icheon, KR;

Inventor:

Hyung-Sik Won, Cheongju, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 15/173 (2006.01); G11C 7/06 (2006.01); G06F 13/40 (2006.01); G06F 15/16 (2006.01); G11C 7/18 (2006.01); G11C 11/4097 (2006.01); G11C 11/4091 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
G06F 15/17331 (2013.01); G06F 13/4022 (2013.01); G06F 15/161 (2013.01); G11C 5/025 (2013.01); G11C 7/06 (2013.01); G11C 7/18 (2013.01); G11C 11/4091 (2013.01); G11C 11/4097 (2013.01); G11C 2207/002 (2013.01); G11C 2207/005 (2013.01); G11C 2207/2236 (2013.01);
Abstract

A converged memory device includes at least a first memory and a second memory and a controller to select the first or second memory for performing fast or normal data processing, respectively, in response to a request from a host. The first memory includes a sense amplifier, one or more cell matrices, and a switching device. The cell matrices includes one or more first region memory cells disposed less than a first distance from the sense amplifier and one or more second region memory cells disposed more than a second distance from the sense amplifier, the second distance being longer than the first distance. The switching device is disposed between the first and second region memory cells. The controller controls the switching device to couple the first region memory cells to the sense amplifier and to decouple the second region memory cells from the sense amplifier according to the request.


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