The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Apr. 18, 2018
Applicant:

University of Virginia Patent Foundation, Charlottesville, VA (US);

Inventors:

Bassem Tossoun, Charlottesville, VA (US);

Andreas Beling, Charlottesville, VA (US);

Assignee:

University of Virginia Patent Foundation, Charlottesville, VA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 31/0232 (2014.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12004 (2013.01); H01L 31/02327 (2013.01); H01L 31/03046 (2013.01); H01L 31/035281 (2013.01); G02B 2006/12123 (2013.01);
Abstract

A monolithic waveguide-integrated photodiode having a first electroconductive contact layer, a depleted waveguide core layer, an absorption layer, and a second electroconductive contact layer, the refractive index of the first electroconductive contact layer being less than the depleted waveguide core layer, the refractive index of the waveguide core layer being less than the absorption layer, and the refractive index of the second electroconductive contact layer being less than the absorption layer. The waveguide core layer is arranged between the first electroconductive contact layer and the absorption layer and also acts as a depleted carrier drift layer. This arrangement results in greater quantum efficiency and shorter photodiode lengths for a given bandwidth.


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