The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 2021

Filed:

Jan. 04, 2019
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Alessandro Tocchio, Milan, IT;

Lorenzo Corso, Ruginello, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81C 1/00246 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0264 (2013.01); B81B 2207/092 (2013.01); B81B 2207/096 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/0118 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0771 (2013.01); B81C 2203/0792 (2013.01);
Abstract

An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.


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