The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
May. 13, 2019
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Junji Hirase, Osaka, JP;
Yoshihiro Sato, Osaka, JP;
Yoshinori Takami, Toyama, JP;
Masayuki Takase, Osaka, JP;
Masashi Murakami, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/361 (2011.01); H04N 5/359 (2011.01); H04N 5/363 (2011.01); H01L 27/146 (2006.01); H04N 5/369 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/361 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H04N 5/359 (2013.01); H04N 5/363 (2013.01); H04N 5/3698 (2013.01); H04N 5/3745 (2013.01);
Abstract
An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.