The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 2021

Filed:

Mar. 04, 2019
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Toshiki Seshita, Kawasaki Kanagawa, JP;

Yasuhiko Kuriyama, Yokohama Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/193 (2006.01); H03F 1/32 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/3205 (2013.01); H03F 3/245 (2013.01);
Abstract

High-frequency amplifier circuitry has a common-source first transistor to amplify a high-frequency input signal, a common-gate second transistor to amplify a signal amplified by the first transistor to generate an output signal, a first inductor connected between a source of the first transistor and a first reference potential node, a second inductor connected between a drain of the second transistor and a second reference potential, a first switch to select whether to connect a first attenuator on an input signal path, a second switch to select whether to connect a first resistor between the input signal path and the first reference potential node, a third switch to select at least one of second resistors connected in parallel to the second inductor, and a fourth switch to select at least one of first capacitors connected in parallel on an output signal path connected to the drain of the second transistor.


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